Generating entanglement with low Q-factor microcavities

We propose a method of generating entanglement using single photons and electron spins in the regime of resonance scattering. The technique involves matching the spontaneous emission rate of the spin dipole transition in bulk dielectric to the modified rate of spontaneous emission of the dipole coupled to the fundamental mode of an optical microcavity. We call this regime resonance scattering where interference between the input photons and those scattered by the resonantly coupled dipole transition result in a reflectivity of zero. The contrast between this and the unit reflectivity when the cavity is empty allow us to perform a non demolition measurement of the spin and to non deterministically generate entanglement between photons and spins. The chief advantage of working in the regime of resonance scattering is that the required cavity quality factors are orders of magnitude lower than is required for strong coupling, or Purcell enhancement. This makes engineering a suitable cavity much easier particularly in materials such as diamond where etching high quality factor cavities remains a significant challenge

Stroboscopic Generation of Topological Protection

Trapped neutral atoms offer a powerful route to robust simulation of complex quantum systems. We present here a stroboscopic scheme for realization of a Hamiltonian with $n$-body interactions on a set of neutral atoms trapped in an addressable optical lattice, using only 1- and 2-body physical operations together with a dissipative mechanism that allows thermalization to finite temperature or cooling to the ground state. We demonstrate this scheme with application to the toric code Hamiltonian, ground states of which can be used to robustly store quantum information when coupled to a low temperature reservoir.Comment: 5 pages, 2 figures. Published versio

Structural and elastic characterization of Cu-implanted SiO₂ films on Si(100) substrates

Cu-implanted SiO₂ films on Si(100) have been studied and compared to unimplanted SiO₂ on Si(100) using x-ray methods, transmission electron microscopy, Rutherford backscattering, and Brillouin spectroscopy. The x-ray results indicate the preferred orientation of Cu {111} planes parallel to the Si substrate surface without any directional orientation for Cu-implanted SiO₂∕Si(100) and for Cu-implanted and annealedSiO₂∕Si(100). In the latter case, transmission electron microscopy reveals the presence of spherical nanocrystallites with an average size of ∼2.5 nm. Rutherford backscattering shows that these crystallites (and the Cu in the as-implanted film) are largely confined to depths of 0.4−1.2 μm below the film surface. Brillouin spectra contain peaks due to surface, film-guided and bulk acoustic modes. Surface (longitudinal) acoustic wave velocities for the implanted films were ∼7% lower (∼2% higher) than for unimplanted SiO₂∕Si(100). Elastic constants were estimated from the acoustic wave velocities and film densities. C₁₁ (C₄₄) for the implanted films was ∼10% higher (lower) than that for the unimplanted film. The differences in acoustic velocities and elastic moduli are ascribed to implantation-induced compaction and/or the presence of Cu in the SiO₂ film.B.J. and M.C.R. are grateful for financial support from the Australian Synchrotron Research Program, funded by the Commonwealth of Australia. M.C.R. would also like to thank the Australian Research Council for their financial support. The financial support of the Natural Sciences and Engineering Research Council of Canada NSERC is gratefully acknowledged by G.T.A. and J.S

Correlation of creep rate with microstructural changes during high temperature creep

Creep tests were conducted on Haynes 188 cobalt-base alloy and alpha titanium. The tests on Haynes 188 were conducted at 1600 F and 1800 F for stresses from 3 to 20 ksi, and the as-received, mill-annealed results were compared to specimens given 5%, 10%, and 15% room temperature prestrains and then annealed one hour at 1800 F. The tests on alpha titanium were performed at 7,250 and 10,000 psi at 500 C. One creep test was done at 527 C and 10,000 psi to provide information on kinetics. Results for annealed titanium were compared to specimens given 10% and 20% room temperature prestrains followed by 100 hours recovery at 550 C. Electron microscopy was used to relate dislocation and precipitate structure to the creep behavior of the two materials. The results on Haynes 188 alloy reveal that the time to reach 0.5% creep strain at 1600 F increases with increasing prestrain for exposure times less than 1,000 hours, the increase at 15% prestrain being more than a factor of ten